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    • 专利摘要:
    HIGH VOLTAGE SENSOR WITH AXIALLY OVERLAYED ELECTRODES. The present invention relates to a high voltage sensor that comprises an insulator (1) with mutually insulated electrodes (Elj, Es) embedded in it. The electrodes are coaxial and cylindrical and overlap axially along part of their lengths. These are mutually staggered and control the surfaces of electrical equipotential so that there is a substantially homogeneous electric field outside the insulator (1) and a substantially homogeneous field, but higher within a detection cavity (7) inside the insulator (1) . A field sensor (6) is arranged inside the detection cavity (7) to measure the field. This design allows to produce compact voltage sensors for high voltage applications.
    公开号:BR112012031272B1
    申请号:R112012031272-3
    申请日:2011-06-07
    公开日:2020-10-27
    发明作者:Stephan Wildermuth；Klaus Bohnert；Norbert Koch；Jan Czyzewski；Sergio Vincenzo Marchese
    申请人:Abb Schweiz Ag；
    IPC主号:
    专利说明:

    TECHNICAL FIELD
    [001] The present invention relates to a voltage sensor for measuring a voltage between a first and a second contact point, specifically a voltage sensor with an insulator, such as a body of an insulating material, which extends between the contact points and with electrodes arranged on said body. The invention also relates to a set of several such voltage sensors arranged in series. TECHNICAL FUNDAMENTALS
    [002] High voltage optical sensors are often based on the electro-optical effect (Pockels effect) in crystalline materials such as Bi4Ge3O12 (BGO) [1]. An applied voltage introduces a differential optical phase shift between two orthogonal linearly polarized light waves that propagate through the crystal. This phase shift is proportional to the voltage. At the edge of the crystal, light waves commonly interfere with a polarizer. The resulting light intensity serves as a measure for the phase shift and thus for the voltage.
    [003] US 4,904,931 [2] and US 6,252,388 [3] describe a sensor in which the total line voltage (up to several 100 kV) is applied over the length of a single BGO crystal. The length of the crystal is typically between 100 mm and 250 mm. An advantage is that the sensor signal corresponds to the true voltage, that is, the line integral of the electric field across the crystal. However, the electric field forces in the crystal are very high. In order to obtain sufficient dielectric strength, the crystal is mounted inside a hollow high voltage insulator made of fiber reinforced epoxy filled with SF6 gas under pressure for electrical insulation. The electrodes at the crystal ends are designed so that the field across the crystal is reasonably homogeneous. The insulator diameter is large enough to keep the field strength in the air outside the insulator below critical limits. Typically, the field strength decreases with the increasing radial distance from the crystal.
    [004] US 6,252,388 [4] describes a voltage sensor which uses several small electro-optical crystals mounted in selected positions along the longitudinal geometric axis of a hollow high voltage insulator. Crystals measure the electric fields at their locations. The sum of these local field measurements serves as an approximation of the voltage applied to the insulator, here, the field forces at a given voltage are significantly lower than with the design of [2] and nitrogen insulation at atmospheric pressure is sufficient . However, as the sensor does not measure the line integral of the field but derives the signal from field forces at a few selected points between ground and high voltage, extra measurements (permissiveness - shielding) to establish the electric field distribution are necessary to avoid excessive approximation errors [5],
    [005] A disadvantage of the above concepts is the requirement for an expensive large size high voltage insulator. The external dimensions are similar to those of corresponding conventional inductive voltage transformers or capacitive voltage dividers. Thus, the attractiveness of such optical sensors is limited.
    [006] The reference [6] describes a sensor in which the tension is divided between several quartz crystals, each with a length of, for example, 150 mm. Here, the piezoelectric deformation of the crystal under the applied voltage is transmitted to an optical fiber, which carries at least two different light modes. The light waves moving through the fiber experience a differential optical phase shift in proportion to the voltage. The ends of each crystal are again equipped with electrodes that provide a relatively homogeneous field distribution in the crystals. The adjacent crystal electrodes are interconnected with electrical conductors. The diffusion of voltage reduces the electric field forces compared to a single crystal solution and thus makes it possible to mount the crystals in a relatively thin high voltage insulator of relatively low cost. The hollow volume of the insulator is filled with soft polyurethane. A disadvantage is that relatively large corona rings are required in order to ensure that the voltage and voltage drops in the individual crystals are of comparable magnitude. Furthermore, improved electric field forces occur specifically on the outer surface of the insulator close to the positions of the individual electrodes: The peak fields must be kept below the air rupture field and therefore prevent an even smaller insulator diameter.
    [007] Reference [7] describes an electro-optical voltage sensor of the type as in [2, 3], but with an electro-optical crystal embedded in silicone. A large hollow high voltage insulator and SF6 gas insulation are thus avoided. As in [6] the tension can be divided between several crystals.
    [008] Another prior technique is a concept known as high voltage bushings. There is often a need in high voltage systems to pass high voltage conductors through or close to other conductive parts which are at ground potential (for example, in power transformers). For this purpose, the high voltage conductor is contained within an inserted insulator. The insulator contains several layers of metallic film concentric with the high voltage conductor and isolated from each other. By appropriately choosing the length of the individual metal film cylinders, the distribution of the electric field within and near the bushing can be controlled in such a way that a relatively homogeneous high voltage voltage drop for earth potential occurs along the outer surface of the bushing [ 8, 9, 10], DESCRIPTION OF THE INVENTION
    [009] The problem to be solved by the present invention is therefore to provide a voltage sensor to measure a voltage between a first and a second contact point of alternative design.
    [0010] This problem is solved by the voltage sensor of the invention. Consequently, the voltage sensor comprises an insulator, or briefly sensor isolator. The insulator is elongated and extends along an axial direction between the first and second contact points. An electric field sensor is arranged within at least one detection cavity, specifically within exactly one detection cavity, within the insulator. Typically, the length of the detection cavity is significantly shorter than the length of the insulator. In addition, a plurality of conductive electrodes are disposed within the insulator. The electrodes are mutually separated by the insulating material and capacitively coupled together. At least one subset of the electrodes (or the entire set of electrodes) is arranged so that each electrode in the subset axially overlaps at least one other electrode in the subset.
    [0011] The electrodes make it possible to control the surfaces of electrical equipment so that on the outer surface of the insulator the voltage falls on the total length of the insulator while inside the insulator the voltage falls on the (shortest) length of the cavity. detection. Preferably, the voltage falls essentially homogeneously both along the outer surface of the insulator and over the length of the detection cavity.
    [0012] While in the absence of the voltage sensor, normal to equipotential surfaces is essentially parallel to the axial direction, normal is perpendicular to the axial direction in the vicinity of the electrodes if such electrodes are present.
    [0013] The electrodes allow to concentrate the electric field inside the detection cavity with a field strength greater than the (average) field strength outside the voltage sensor, that is, greater than the voltage between the contact points divided by the distance between the contact points.
    [0014] Advantageously, at least one of the electrodes is a shielding electrode that radially surrounds said detection cavity. The electrode can be capacitively coupled to two subsets of electrodes and this prevents the high electric field inside the detection cavity from extending into the air outside the sensor.
    [0015] Advantageously, the voltage sensor comprises two sets of electrodes mutually staggered.
    [0016] The invention in its preferred modalities provides a high voltage sensor with a thin and light insulator at low cost. The electrodes provide an electric field direction and, optionally, avoid the need for electrodes directly applied to the field sensor. Solid-state insulation may be sufficient (without oil or gas).
    [0017] The invention also relates to a series of such high voltage sensors in series. With this, a combination of several modules of the same high voltage sensor differently formed or dimensioned can be used to measure a wide range of different voltage levels.
    [0018] Other advantageous modalities are listed in the embodiments as well as in the description below. BRIEF DESCRIPTION OF THE DRAWINGS
    [0019] The invention will be better understood and objects other than those presented above will be apparent from its following detailed description. This description refers to the attached drawings of exemplary modalities, in which:
    [0020] Figure 1 is a sectional view of a voltage sensor;
    [0021] Figure 2 shows (a) a single voltage sensor as well as sets of two (b) and four (c) voltage sensors;
    [0022] Figure 3 shows (a) a sectional view of a field sensor inside a voltage sensor and (b) the arrangement of two field sensors;
    [0023] Figure 4 shows the optical field sensor and the alignment of the geometric axes of the electro-optical crystal, the retarder, and the polarizers;
    [0024] Figure 5 shows (a) the optical field sensor with polarizers operated in transmission, (b) an optical field sensor with retarder and polarizers operated in transmission, (c) an optical field sensor with polarizer operated in reflection, (d) an optical field sensor with retardant and polarizer operated in reflection, (e) an optical field sensor with reflective prism, and (f) a series arrangement of two optical field sensors;
    [0025] Figure 6 shows the source and the signal processing module and its optical connections to a series of optical field sensors;
    [0026] Figure 7 shows an optical field sensor with end electrodes or contact electrodes;
    [0027] Figure 8 shows, when viewed in axial direction, (a) electrode layers with overlapping ends and (b) electrodes forming closed cylinders;
    [0028] Figure 9 shows alternative electrode sets for a given nominal voltage: (a) a voltage sensor with a single field sensor of length 21, (b) a voltage sensor with two separate field sensors each of length I;
    [0029] Figure 10 shows an optical field sensor operated in reflection with optics to generate two quadrature signals from a single detection element;
    [0030] Figure 11 shows a set of two field sensors mounted in series;
    [0031] Figure 12 shows a detailed cross-sectional view of a mounting and contact electrode for a sensor body; and
    [0032] Figure 13 shows high voltage sensors that have insulators of variable radial thickness. WAYS TO CARRY OUT THE INVENTION DEFINITIONS
    [0033] The term "high voltage" typically designates voltages that exceed 10 kV, specifically that exceed 100 kV.
    [0034] The terms "radial" and "axial" are understood with respect to the axial direction (along geometric axis 8, geometric axis z) of the sensor, with radial designating a direction perpendicular to the axial and axial direction designating a direction parallel to the axial direction.
    [0035] A given electrode "axially overlapping" another electrode indicates that there is a range of axial coordinates (z coordinates) that the two electrodes have in common. TENSION SENSOR WITH ELECTRIC FIELD DIRECTION
    [0036] Figure 1 shows a modality of a voltage sensor. The present embodiment comprises an elongated body, advantageously rod-shaped, of an insulating material that forms an insulator 1, briefly called sensor insulator 1, such as epoxy resin or paper impregnated with epoxy resin. This extends between a first contact point 2 and a second contact point 3, both of which can be equipped with metal contacts 4 to contact neighboring voltage sensors or voltage potentials. In the present embodiment, insulator 1 is cylindrical. It has a central hole 5 filled with a filling material.
    [0037] An electric field sensor 6, in the present embodiment an optical field sensor, such as a cylindrical crystal of Bi4Ge3O12 (BGO) or BÍ4SÍ3O12 (BSO), is placed inside hole 5 inside a detection cavity 7 The detection cavity 7 is advantageously at a center between the first contact point 2 and the second contact point 3 in order to minimize distortion of the electric field around the voltage sensor.
    [0038] A reference plane 16 perpendicular to the geometric axis 8 of the device and disposed in the center of the detection cavity 7 is used below as a geometric reference to describe the geometry of some of the electrodes. Note: Here it will be assumed that the detection cavity 7 is located in the middle between the contact points 2 and 3. Asymmetric positions of the detection cavity 7 will be briefly considered below. Still, it is noted that the term "cavity" does not imply that there is an absence of insulating material in the respective region.
    [0039] A plurality of E electrodes are disposed within the insulator 1. The E electrodes are mutually separated by the insulating material of the insulator 1 and capacitively coupled together. In the present modality, the E electrodes are formed of metallic cylinders (which consist, for example, of a thin aluminum film) of different axial extensions concentric with the longitudinal geometric axis 8. The E electrodes control the equipotential surfaces and the distribution of the electric field outside and inside the insulator 1. The lengths (ie, axial extensions) of the individual E electrodes and their radial and axial positions are chosen so that the equipotential surfaces are spaced substantially equidistant along the total length of the outer surface of insulator 1 and are concentrated, but again with essentially equal distances, within the detection cavity 7. As a result the applied voltage V falls uniformly along the outer stem surface as well as along the detection cavity. Preferably, the length of the field sensor is such that the sensor is essentially exposed to the total voltage drop, i.e., the sensor length is at least the length of the detection cavity.
    [0040] At least one of the electrodes E is an ES shielding electrode and radially surrounds the detection cavity 7, thereby capacitively coupling the two sets of electrodes that are separated by the reference plane 16.
    [0041] An electrode, designated E11, is electrically connected at the first contact point 2, and is subsequently called the "first primary electrode". Another electrode, designated E21, is electrically connected at the second contact point 3, and is subsequently called the "second primary electrode". These two electrodes carry the potential of contact points 2 and 3, respectively. The other electrodes form a capacitive voltage divider between the two primary electrodes and are therefore in potential intermediates.
    [0042] In addition to the Es shielding electrode, the electrodes comprise a first set of electrodes, called E1i with i = 1 ... N1, and a second set of electrodes, called E2i with i = 1 ... N2, with the second index i being or operating independently of the first index i. For reasons of symmetry, N1 is advantageously equal to N2. In the modality of Figure 1, N1 = N2 = 6, but the actual number of electrodes may vary.
    [0043] The electrodes E1i of the first set are arranged in a first region 10 of the insulator 1, which extends from the center of the detection cavity 7 to the first point of contact 2, while the electrodes E2i of the second set are arranged in a second region 11 of the insulator 1, which extends from the center of the detection cavity 7 to the second contact point 3.
    [0044] The E1i electrode from the first set of electrodes forms the first primary electrode and the E2i electrode from the second set of electrodes forms the second primary electrode. These electrodes are radially closer to the longitudinal geometric axis 8, with the other electrodes being arranged at greater distances from the longitudinal geometric axis 8.
    [0045] As mentioned above, the various electrodes overlap in the axial direction and are of a generally "staggered" design. Advantageously, one or more of the following characteristics are used: a) For each set j (j = 1 or 2) of electrodes, the electrodes Ejj and Ejj + i overlap axially along an "overlapping section". In this overlapping section the electrode Ejj + i is arranged radially out of the electrode Ejj. b) For each electrode set j: - Each electrode has a central end (as illustrated by reference number 14 for some of the electrodes in Figure 1) that faces the reference plane 16 of the sensor and a contact end (as illustrated by reference number 15) axially opposite the central end 14, - The central end 14 of the electrode Ejj + i is closer to the reference plane 16 than the central end 14 of the electrode Ejj and the contact end 15 of the electrode Ejj + i is closer to the reference plane 16 than the contact end 15 of the electrode Ejj, with this the electrode Ejj + i is displaced axially towards the center compared to the electrode Ejj, and Ejj + i is displaced radially towards the exterior compared to Ejj. - The contact end 15 of the electrode Ejj + 1 has an axial distance Cjj of the contact end 15 of the electrode Ejj, and the central end 14 of the electrode Ejj + i has an axial distance Bjj of the central end 14 of the electrode Ejj, and - The electrodes Ejj and Ejj + i overlap axially between the contact end 14 of the electrode Ejj + i and the central end 14 of the electrode Ejj. c) The distances Bjj and Cjj can be optimized according to the desired field design. Specifically, in order to obtain a stronger field within the detection cavity 7 than outside the voltage sensor, the axial distance Bjj is advantageously chosen to be less than the corresponding axial distance Cjj, for all i and j- d) For most of the designs, if a homogeneous field is desired within the detection cavity 7, the axial distances Bjj must be substantially equal to a common distance B, that is, they must all be the same. Similarly, if a homogeneous field is desired on the surface and outside the voltage sensor, the area distances Cjj are advantageously substantially equal to a common distance C, that is, these are also all the same. e) The shielding electrode Es should advantageously have an axial overlap with at least one electrode from the first set and also with at least one electrode from the second set. This, on the one hand, provides improved protection against the high electric fields within the detection cavity 7 that reach the surface of the device. On the other hand, this provides a good capacitive coupling between the two sets of electrodes through the shielding electrode, thereby decreasing the corresponding voltage drop. To further improve this capacitive coupling as well as field homogeneity within the detection cavity 7, the shielding electrode Es advantageously has an axial overlap with the radially outermost electrode E1θ of the first set and the radially outermost electrode E2θ of the second set and is disposed radially out of these outermost electrodes E1θ and E2θ. f) In order to uniformly distribute the fields outside and inside the voltage sensor, the electrodes are advantageously arranged symmetrically with respect to the reference plane 16 of the device. g) For the same reason, the electrodes are advantageously cyclic / or coaxial to each other, and specifically coaxial with the longitudinal geometric axis 8.
    [0046] Figure 1 further illustrates some other advantageous aspects: - Field sensor 6 (0 which is, for example, an electro-optical crystal) is advantageously cylindrical with a length L and is positioned inside the central hole 5 (diameter e) of insulator 1 (external diameter D and length L), and inside the detection cavity 7. - Isolator 1 contains, as an example, six electrodes in both the first and second sets. These Ejj electrodes, as well as the Es shielding electrode, are advantageously of a metallic film, concentric with 0 field sensor 6 and 0 insulator 1. - With Bjj and Cjj chosen as described above, preferably the electrodes of the two sets are equally spaced in the radial direction with a uniform separation distance P between neighboring electrodes, and also the radial distance between the outermost electrodes E1θ, E2θ of each set for the shielding electrode Es is equal to P. Again this contributes to distribute the electrical fields more evenly both outside and inside the insulator 1. - Preferably, the innermost primary electrodes E11 and E2i project on the axial ends of the field sensor 6 for a length a, that is, the field sensor 6 axially overlaps with both primary electrodes. The length a is advantageously large enough that the field strength in the immediate vicinity of the ends of the field sensor 6 and beyond is essentially zero, that is, the field sensor 6 is exposed to the total voltage applied between the points of contact 2 and 3. - Preferably, the shielding electrode Es is positioned halfway between the contact ends 1.3. - The primary electrodes E11 and E2i are in contact with the two electrical potentials, for example, the earth and high voltage powers, at the corresponding contact points 2, 3 through the metal contacts 4. - Preferably, the insulator 1 it is equipped with covers 19, which consist, for example, of silicone, on its external surface (not shown in Figure 1), which provides an increased slip distance between the high voltage and earth potential for external operation and specifically for high voltage operation.
    [0047] Field targeting by Eij, ES electrodes avoids excessive local peak fields both outside and inside insulator 1. As a result, the radial dimensions of insulator 1 can be made relatively small without the danger of electrical breakage in ambient air.
    [0048] The electric field strength in the immediate vicinity of the two ends of the field sensor 6 is essentially zero. The same is true inside hole 5 below and above the detection element. As a benefit any component, specifically any optical component if an optical field sensor is used, is in a field-free region. This is especially advantageous if an optical field sensor is used, because the various auxiliary optical components, such as retarders, polarizers, and collimators 18, can be located in a field-free environment. See also Figure 12.
    [0049] There is no need for field direction electrodes on the crystal ends, which simplifies the sensor assembly. Primary electrodes E11 and E21 are in electrical contact with contact points 2, 3 (for example, ground and high voltage potential). The other electrodes are intermediate potentials generated by the capacitive voltage divider formed by the electrodes.
    [0050] Hole 5 is filled with a soft material, for example, silicone, which provides sufficient dielectric strength. The silicone contains a filling material which determines sufficient compressibility and accommodates any thermal expansion of the silicone and insulator 1. The filling can, for example, consist of micro-sized beads made of a soft material or tiny gas bubbles (such as such as SF6 gas). The silicone can also serve to keep the field sensor 6 in place and suppress the effects of mechanical shock and vibration.
    [0051] Due to its light weight, the voltage sensor can be mounted in suspension in a high voltage substation.
    [0052] The dimensions of the voltage sensor a of its parts depend on the nominal voltage and are chosen so that the sensor meets the requirements of relevant standards for overvoltages, radius voltages and switching impulse (for example, Ref. 17). For example, insulator 1 of a 125 kV module can be an epoxy rod that has a total length L of approximately 1 m to 1.5 m and a diameter D of 50 mm to 80 mm. The crystal can have a length I of 150 mm and a diameter d of 5 mm. The internal hole 5 of the rod can then have a diameter between 15 and 25 mm. The parameters a, Bij, Cij, D, P are chosen in such a way that the stress applied to the rod ends falls as evenly as possible along the length of the crystal inside the hole and at the same time along the total length of the rod. epoxy on its outer surface. The design can be optimized by using an appropriate electric field simulation tool.
    [0053] Choosing the Bij distances as well as Cij being equal as described above also contributes to a simple and economical insulator manufacture.
    [0054] Figure 1 illustrates only one possible design of the electrodes. It should be noted that, depending on the required size and shape of the sensor, the design of the electrodes may vary.
    [0055] For example, the electrodes can also be non-cylindrical, for example, having an oval cross section or having a variable diameter. The electrodes can, for example, be truncated tapered (trunk-tapered), their end sections 15 can be extended outward or their end sections 14 can be extended inward.
    [0056] Each electrode can consist of a continuous conductive sheet, such as a metallic film, or it can, for example, be perforated or have gaps. MODULAR DESIGN
    [0057] The voltage sensor described above can form a module in a set of several voltage sensors arranged in series, as shown in Figure 2a. Specifically, a module containing a single field sensor 6 as described above can be designed for a nominal voltage D, for example 125 kV or 240 kV. Figure 2a also shows schematically the covers 19 applied outside the insulator 1.
    [0058] For 240 kV operation, two 125 kV modules can be mounted in series (Figure 2b). The primary electrodes E21 and E12 of the neighboring modules are in electrical contact at the junction between the two modules. The voltage is then approximately evenly divided over the two field sensors 6. Alternatively, a single continuous insulator (approximately twice the length of the individual rods) which contains two field sensors 6 and two corresponding sets of electrodes. Field guidance can be used instead of two separate epoxy rods.
    [0059] It should be noted that distributing the voltage over separate crystals of length I results in a smaller insulator diameter and thus a lower insulator cost than applying the same voltage to a single crystal of length 2I as illustrated in Figure 9. A single long crystal (Figure 9a) requires more electrode layers and thus a larger diameter of insulator than two shorter crystals (Figure 9b) in order to maintain the field strength between the layers below critical limits.
    [0060] At even higher operating voltages, a corresponding number of lower voltage modules are arranged in series, for example, four 125 kV modules for an operating voltage of 420 kV (Figure 2c). In order to obtain sufficient mechanical strength of the structure, these modules in series can be mounted on an external high voltage insulator and standard hollow core 25, which is, for example, made of fiber-reinforced epoxy. The hollow volume between the modules and the external insulator 25 is filled with, for example, polyurethane foam, again, to provide sufficient dielectric strength and to some degree mechanically decouple the modules from the external insulator 25. In an arrangement as in Figure 2c the individual insulating bodies 1 are not equipped with silicone covers but the external or outside insulator 25 is equipped with covers 19 instead.
    [0061] Furthermore, the geometry of the field targeting electrodes can be chosen somewhat differently for the individual modules for further optimization of the field distribution. In addition, there may be corona rings at the earth and high voltage ends of the structure as well as in intermediate positions.
    [0062] In the case of several modules, it may be sufficient to equip only one module or a subset of modules with an electric field sensor in case the voltage ratios remain sufficiently stable. FIELD SENSOR ASSEMBLY
    [0063] Figures 3a and 3b illustrate the assembly of field sensor 6 inside hole 5 of insulator 1. The specific example is for an optical field sensor, although similar techniques can, where applicable, also be used for others types of field sensors.
    [0064] The main features are as follows: - The entire structure is pre-assembled as a subunit and then inserted into hole 5. The remaining hollow volume of hole 5 is subsequently filled with silicone gel as mentioned above. Instead of filling the entire hole 5, the silicone filling can be restricted to the high field region in the vicinity of the field sensor 6. - Each field sensor 6, which can, for example, be formed by an electro- optical, is mounted inside a support tube 22, for example, made of fiber-reinforced epoxy, by means of soft supports 24 within the free field volume at the ends of the field sensor. The mechanical forces acting on the field sensor are thus kept to a minimum, that is, the field sensor is mechanically decoupled from the insulation rod. - For an optical sensor, the fibers 26 that guide the light to and from the field sensor 6 have strain reliefs 28 that are part of the support tube 22. - On both sides of the support tube 22, it is connected via joints flexible 35 in spacer tubes 32. Spacer tubes 32 extend to the ends of insulator 1 or, in the case of a series of several field sensors 6 within a single insulator 1, can extend to the adjacent field sensor 6 (Figure 3b ). The flexible joints 35 accommodate a differential thermal expansion of the insulator 1 and the various pipe segments as well as a folding of the entire structure, for example, due to wind forces. Spacer tubes 32 can be composed of several subsections, again with flexible joints between them. - If field sensors 6 are operated in optical transmission as shown in Figure 6, the return fiber 27 forms a semi-loop at a suitable hollow volume at the end of an individual insulator 1 (not shown) or at the farthest end of the entire structure, if the insulator 1 is composed of several individual bodies 1 as in Figures 2b, 2c.
    [0065] Advantageously, the contact points 2, 3 of the insulating insulator 1 are equipped with metal flanges (not shown in Figure 1). The flanges are in electrical contact with the metal contacts 4 (or the contacts 4 can be understood by such metal flanges). The flanges facilitate the installation of the voltage sensor and, in the case of a series of several voltage sensor modules, the connection of neighboring modules. The metal flanges can also provide the hollow volume for the semi-loop of the aforementioned return fibers.
    [0066] It should be noted that the individual electrodes of the two sets E1i and E2i may not form perfect cylinders, but for manufacturing reasons they may be formed of an aluminum film, the ends of which overlap as illustrated in Figure 8a with a thin layer insulating material between the overlapping ends. Alternatively, the overlapping film ends are in direct contact and thus form electrically closed cylinders, as shown in Figure 8b. SENSOR MODIFICATIONS a) Asymmetric Location and Detection Cavity
    [0067] In the above description it was assumed that the detection cavity is located halfway between the contact points 2, 3 of the insulator 1. Depending on the specific environment of the voltage sensor, it may be conceivable that an asymmetric location of the detection cavity with respect to contact points 2, 3 is more appropriate. Preferably in this case, the two sets of electrodes E1 j and E2j are also asymmetrical and the reference plane 16 as well as the shield electrode Es is moved from the center of the cavity towards the contact point at the furthest end of the insulator 1. For For example, if the sensor cavity is closer to the contact point 2, the reference plane 16 and the shield electrode Es are displaced towards the contact point 3. As a result, the axial distances B1 j are longer than axial distances B2j and likewise axial distances C2j are longer than axial distances C1j. The values within each axial distance set B1j B2j C1j C2j can be chosen as equal or can be chosen differently in order to further optimize the field distribution depending on the specific situation. As an extreme case, a set of electrodes E1j or E2j can be omitted completely. b) Local Field Measurement
    [0068] As the field distribution within the detection cavity is quite homogeneous and stable, a local electric field measurement (that is, essentially punctual), for example, in the center of the cavity, can be an option as an alternative or even in combination with field line integration. A local electric field sensor in this sense is a sensor that measures the electric field along only part of the axial extension of the detection cavity. The local field essentially varies in proportion to the applied voltage. The influence of thermal effects on the local field strength, for example, due to the thermal expansion of the detection cavity 7, can be compensated in the signal processor, if the temperature was extracted as mentioned below.
    [0069] As an additional alternative to a perfect line integration of the electric field within the detection cavity 7 by means of a long crystal, the voltage can be approximated to several local field measurements (point), with the local field sensors arranged at various points within the cavity 7 along the geometric axis 8. Specifically, such an arrangement can be advantageous, if the length of the detection cavity is chosen relatively long so that it is difficult to cover this length with a single crystal. Such an arrangement may be of interest in the event that very high voltages (for example, 420 kV or higher) must be measured with a single voltage sensor module.
    [0070] Still, another alternative is to combine several crystals (with their aligned electro-optical geometric axes) to form a longer continuous detection section.
    [0071] Furthermore, a combination of several electro-optical crystals with inactive material (such as fused silica) between them as described in [7] and interrogated by a single beam of light can be used. c) Field Sensor With Contact Electrodes
    [0072] To determine that the total voltage falls over the length of field sensor 6, it can be advantageous if the ends of sensor 6 are equipped with electrodes that are in electrical contact with the innermost electrodes E11 and E2i. The electrodes can be raw metal parts, transparent electrode layers such as Indian tin oxide, or a combination thereof. d) Voltage Measurement in a Gas Insulated Distribution Board
    [0073] Ref. 15 describes an optical voltage sensor for a gas insulated switchgear with SF6. Here, a piezoelectric crystal with a attached fiber is used to measure the voltage between two electrodes at the crystal ends. Other alternatives are an electro-optical crystal or any other type of optical voltage sensor. The electrodes have radial dimensions considerably larger than the crystal in order to provide a reasonably homogeneous electric field distribution throughout the crystal.
    [0074] A capacitively coupled electrode arrangement as shown in Figure 1 can also be used for voltage sensors in gas-insulated switchgear in order to avoid the large size electrodes of [15]. In this case, the two sets electrodes E1 j and E2j can again be embedded in an insulating rod as shown in Figure 1. Alternatively, a solid insulating material can be omitted and replaced with SF6 insulating gas from the switchboard system. In the latter case, the electrode sets can be held in place by means of insulating spacers between the various electrode layers.
    [0075] Instead of SF6 gas, another insulating gas such as nitrogen can be used. An additional alternative is the vacuum.
    [0076] In other conceivable applications of the sensor, for example, in electrical power transformers, a liquid, commonly transformer oil, can be used as the insulating material.
    [0077] In other words, insulator 1 can also be or comprise a liquid, gas or vacuum, in addition to a solid and any combinations thereof. OPTICAL SENSOR ELEMENTS
    [0078] As mentioned, field sensor 6 is advantageously an electro-optical field sensor, or, more generally, an optical sensor that introduces a field-dependent phase shift between a first polarization or mode and a second polarization or mode of light passing through it.
    [0079] Advantageously, such an optical sensor comprises: - an electro-optical device with field-dependent birefringence, specifically a crystal or a pole waveguide, such as a pole fiber, which exhibits a Pockels effect, or - a device piezoelectric, specifically crystalline quartz or a piezoelectric ceramic, and an optical waveguide that carries at least two modes, wherein said waveguide is connected to the piezoelectric device in such a way that the waveguide length is field dependent .
    [0080] Ideally, the voltage sensor measures the integral path of the electric field between two electrical potentials, for example, the earth and high voltage potential. This concept is specifically suitable for outdoor installations, because the measurement accuracy is not impaired by field disturbances, for example, due to rain or ice or by cross-linking of neighboring phases. Electro-optical crystals of a certain symmetry are well suited to implement this concept [3], a) Pockels effect
    [0081] An electric field applied to an electro-optical crystal induces an anisotropic change in the refractive index of the material (birefringence). This birefringence causes a phase shift between two orthogonally linear polarized light waves that pass through the crystal (Pockels effect). By measuring this phase shift the applied voltage can be inferred.
    [0082] A configuration of a field sensor 6 which implements the line integration of the electric field is shown in Figure 4: The voltage is applied to the end faces of a crystal 33 with light also entering and leaving the crystal through the end faces. The crystal material and its geometric orientation axis need to be chosen so that only the electric field components Ez (which point along the geometric axis of cylinder z or 8) contribute to the electro-optical phase shift [1, 3], A suitable material is BÍ4GesOi2 (BGO) in a [001] configuration, which corresponds to the geometric axis of quadruple crystal being parallel to the direction of light propagation.
    [0083] The light input (thick arrow) is linearly polarized by a first polarizer 34 (the arrows indicate the transmitted polarization direction; the polarizer can also be a polarizer within fiber). To obtain the maximum modulation contrast, the electro-optical geometric axes of the crystal x ', y' are preferably oriented at an angle of 45 ° with respect to the incoming linear polarized light. The phase shift r caused by the electric field is converted to a light amplitude modulation by a second polarizer 36 placed at the outlet end of the crystal. To polarize the phase delay, a retarder 38 can be placed within the beam path (between the two polarizers 34, 36), which adds an additional ψ phase shift. The main retarder geometric axes, e1 and e2, are aligned parallel to the electro-optical geometric axes, x 'and y'.
    [0084] In general, the intensity I of the transmitted light is given by l = losen2 ([r + ψ] / 2). In the case of an A / 4 wave plate used as the retarder 38 this becomes

    [0085] with half wave voltage

    [0086] For abs (VQ « / π / 2 the intensity then changes linearly with the voltage. Here V is the voltage applied to the crest, 2 is the wavelength of the light, no is the refractive index of the crystal, r is the relevant Pockel coefficient. For BGO Vπ it is approximately 75 kV at a wavelength of 1310 nm. b) Generation of Quadrature Signals
    [0087] For typical voltages in a high voltage substation, the voltage V is much higher than the half wave voltage Vπ, which results in an ambiguous sensor response. This ambiguity can be removed by working with two optical output channels that are substantially 90 ° (π / 2) out of phase (square) [11], or that have any other mutual phase shift that is not a multiple of π. The 90 ° phase shift can be generated by dividing the light that leaves the crystal in two paths through a beam splitter 67 and a deflection prism 68 and placing a quarter wave plate 38 in one of the paths (Figure 10) [3], Additional modifications are illustrated in [3], Figure 10 shows an arrangement where the sensor is operated in a reflective mode. Alternatively, the sensor can be operated in transmission, that is, the optics for generating the quadrature signals are then arranged on the opposite crystal face so that the light passes through the crystal only once.
    [0088] Another option to remove the ambiguity is to operate the sensor with a light of two different wavelengths [12],
    [0089] In the sensor according to the present invention that contains two or more crystals, as in the set of Figures 2b, 2c or 3, a quadrature signal can also be generated by inserting a phase retarder 38 in the optical path in one of the crystals and operating the other crystals without a retarder, that is, there is only one outlet channel per crystal (Figure 4). Extra beam splitters and deflection prisms for a second channel as required in [3] are thus avoided. As a result, the device becomes significantly smaller, which makes it possible to mount the detection elements within a relatively narrow hole. Preferably, the assembly is designed so that the voltage drops in each detection element are the same. The signals of the individual crystals then have, as a function of the total tension, the same periodicity. In cases where the relative voltage drops in the various sensing elements can substantially vary due to ambient disturbances of the electric field distribution, it may be advantageous with respect to signal processing to generate two quadrature signals from each individual sensor element (Figure arrangement 10). The periodicity of the two signals and their phase difference then remains constant (apart from the temperature dependence of the retarder) and is not affected by the field distribution.
    [0090] Alternatively, the set can be designed so that the voltage drops across the different crystals differ. In this case, the optical signals of the individual crystals have a different periodicity. With proper signal processing this also allows the applied voltage to be unambiguously reconstructed.
    [0091] Figure 5 shows the optical components in more detail. The components (polarizers, wave plate, fiber pig tail collimators) are advantageously directly attached to the crystal, for example, by an optical adhesive. The assembly of Figure 5a is without a retarder whereas the assembly of Figure 5b is with a retarder 38, specifically a quarter wave retarder, to generate a quadrature signal.
    [0092] In Figures 5a, 5b the crystals are operated in transmission. Alternatively, only one fiber 26 can be used to guide the light to and from the crystal 33 as shown in Figures 5c, 5d. In this case, a reflector 40 at the other end of the crystal is used to direct the light back to the fiber. This setting doubles the sensitivity of the detection element. As a result of the double pass a π / 8 38 retarder is now advantageously used to generate a quadrature signal.
    [0093] A reflective configuration can also be performed with two individual fibers 36 for light input and light output and a prism reflector 42 as shown in Figure 5e.
    [0094] Returning to the configuration where a set comprising several field sensors is used, it was mentioned that a 38 retarder, specifically an À / 4 retarder, can be assigned to one of these, or, more generally, only to a subset ( that is, not all of these, to add additional phase delay to the light that passes through the respective field sensor (s), which can then be used for quadrature demodulation. This is shown schematically in Figure 5f.
    [0095] Alternatively (or in addition) to adding one or more retarders to such a set, it is possible to design at least one (or a subset) of the field sensors so that it generates an electro-optical phase shift that is substantially different of the phase shifts of the remaining field sensors, specifically ± π / 2 or less at the maximum voltage to be measured. The respective field sensor (s) may, for example, be shorter (s) than the other field sensor (s). In this case, the signal from the respective field sensor (s) is unambiguous, which allows correcting the ambiguities in the (more accurate) signals from the other field sensor (s). c) Sensor interrogation
    [0096] The light is guided to and from the individual crystals by means of single or multiple optical fibers [3]. The fibers can be embedded in the silicone filling inside hole 5 of the epoxy rods. The crystals can be operated in transmission or in reflection [3], as illustrated in Figures 5 and Figure 10.
    [0097] In an arrangement comprising several voltage sensors in series, the field sensors 6 are preferably interrogated using a common light source 44 and a signal processing unit 46 as shown in Figure 6. Advantageously, the light from the light source 44 is transmitted through a single fiber connection 48 to the sensor base (this sensor end is at ground potential). The light is then distributed to the individual field sensors 6 via a fiber optic beam splitter 56. The light is returned from each field sensor 6 to the signal processor unit 46 via individual fiber connections 50, 52 , 54. All fibers (input and output) can be embedded in a common fiber cable 58.
    [0098] Alternatively, the opto-electronics module can be mounted directly on the sensor base to avoid long fiber cables. In addition, the opto-electronics module can be equipped with a means for active or passive temperature control. TEMPERATURE COMPENSATION
    [0099] The phase shift introduced by retarder 38 is typically a function of temperature. Therefore the temperature at the location of the retarder can be extracted in the signal processor from two of the aforementioned quadrature signals, as is also mentioned in [3], The temperature information can then be used to compensate for any temperature dependence of the measurement of voltage. Usually, the retarder temperature can be considered as a sufficiently good approximation of the total temperature of the voltage sensor. The temperature dependence of the voltage measurement can be composed of several contributions: the temperature dependence of the electro-optical effect and in addition, in the case of local field sensors, contributions of the temperature dependence of the dielectric constants of the sensor material and materials surrounding areas as well as changes in local electric field strength due to thermal expansion of insulator 1 with embedded electrodes.
    [00100] The following examples and additional modalities are discussed, specifically in connection with Figures 11-13. OPTIMIZATION OF ELECTRIC FIELD DISTRIBUTION AND VOLTAGE DROP THROUGH SENSOR MODULES
    [00101] In Figure 11 an exemplary configuration of a set of high voltage sensors is shown which consists of a series arrangement of at least two high voltage sensors with identical electrode dimensions. The first primary electrode E11 of the second high voltage sensor is connected at high potential and the second primary electrode E22 of the first high voltage sensor is connected at earth potential (not shown). The second primary electrode E21 of the second high voltage sensor is connected to the first primary electrode E12 of the first high voltage sensor, so that the two electrodes are at the same potential. The boundary electric field conditions found in a typical substation environment, for example, comprising neighboring phases, result in an uneven distribution of voltages between the two high voltage sensors. Similarly, the voltages are unevenly distributed among the electrode sets arranged in the first regions 100, 101 with respect to the second regions 110, 111 in any of the high voltage sensors that form the set. This uneven voltage distribution generates an increased electric field voltage in certain locations of the high voltage sensors, specifically in the lower section 101 of the second high voltage sensor. To compensate for this effect, the capacitances of the electrode sets in the first regions 100, 101 and in the second regions 110, 111 of each high voltage sensor can be made different, thus making the design of the high voltage sensor asymmetric with respect to the cavities 70 and 71, respectively. A useful way is to choose the axial length of the electrodes in the first regions 100, 101 to be longer than the electrodes in the second regions 110, 111. In exemplary configurations the capacitances C1, C2 and C3, C4 of the electrode assemblies in the first and second regions 100, 110 and 101, 111, respectively, of the two high voltage sensors can be chosen so that C1 = C3 and C2 = C4, and specifically with a ratio of C1 / C2 being in the range of 1.1 to 1 , 5.
    [00102] Preferably, the radial dimensions of the electrodes in the first 100 and second region 110 of the first high voltage sensor and in the first 101 and second region 111 of the second high voltage sensor are the same.
    [00103] Alternative ways to optimize the capacitance of the field targeting structure are: - Variation of the graduation distance, for example, B1i ψ B21 or C1i Ψ C21 (refer to Figure 1); - Different number of electrodes in the first and second regions 10, 11; 100, 101; 110, 111 of the high voltage sensor or the high voltage sensor set; - Different radial spacing, for example, the distance P between the electrodes being different in the first and second regions 10, 11; 100, 101; 110, 111 of the high voltage sensor or the high voltage sensor set; - Connect electrically selected neighboring electrodes to effectively short them; - Change the dielectric constant of the material between the electrodes; specifically, materials with a high dielectric constant could be used to increase capacitances and thereby reduce the effect of uneven voltage distribution.
    [00104] In general it would be beneficial to choose the capacitance for the high voltage sensors to be much higher compared to any parasitic capacitance. This will decouple the field distribution within the external influence detection cavity. For example, a material between the electrodes with a high dielectric constant could be used to increase capacitance and thereby reduce the effect of uneven voltage distribution.
    [00105] Alternatively, or in addition, the shape of the metal contacts 4 connected to the electrodes can be chosen so that the effect of the parasitic capacitances on the voltage distribution is minimized. For example, the metallic contact connected to the first primary electrode of the second high voltage sensor could be designed with a diameter significantly larger than the diameters of all electrodes of that high voltage sensor. In this way it would serve two functions: In addition to its mechanical purpose, specifically to assemble the equipment and seal the top, it could be used to adjust the parasitic capacitance. ELECTRODES STUCK IN THE SENSOR CRYSTAL
    [00106] The preferred modality of the field sensor is an electro-optical crystal which is equipped with electrically conductive electrodes at both ends. The modalities of such contact electrodes 64 are shown in Figure 12, where 640 designates a front part of the contact electrode, 641 a flexible connection, 642 a front cavity of the contact electrode, 643 a rear part of the contact electrode, 644 a contact electrode seal, 645 a rear volume or internal volume of the contact electrode, 648 centering pin (s), and 480 optical fibers or optical cables.
    [00107] In modalities these contact electrodes 64 can have the following characteristics (each characteristic alone or in any combination with other characteristics): - The electrode is connected to the respective electrical potential, that is, to the innermost electrodes (electrode E1i or E2i ) by means of an electrical connection 66, preferably a metallic wire 66 which runs back to the metallic contact 4; - The connection between the sensor crystal 33 and the contact electrode 64 is made in a flexible way to avoid mechanical stresses on the crystal 33, for example, due to the different thermal expansion of the crystal 33 and the electrode 64. Suitable materials are, for example, rubber or silicone O-rings; as an alternative, the electrode 64 itself or its front part 640 could be made of an elastic material, for example, electrically conductive rubber or another elastomer; - The front part 640 of the contact electrode 64 can have a rounded shape which minimizes the electric field voltage on the surface of the contact electrode 64. The axial distance between the front part 640 of the electrode 64 and the front surface of the flexible connection 641 from the crystal 33 to the contact electrode 64 it is chosen large enough so that the electrical discharges in any of the materials and specifically in any material interfaces adjacent to the flexible connection 641 are avoided; - Suitable materials for contact electrode 64 are electrically conductive materials, for example, metals and alloys such as aluminum alloys and stainless steels; advantageously, electrodes of complex shape 64 would be manufactured in a molding process in order to obtain a low cost; specifically, polymeric materials and polymer-based compounds can be used for molding, such as, for example, electrically conductive thermoplastic or thermostable materials; - The electrode can have a front cavity 642, as shown in Figure 12, in order to allow the filling material, for example compressible silicone or polyurethane foam, to properly fill any space that contains high electric fields, for example, within the gap between the contact electrode 64 or the front part 640 and the sensor crystal 33; with the filling material being inserted into an overpressure, the remaining air will be compressed into the free field space within this front cavity 642 which is free from electric fields and thus free from the risk of electrical discharges in the air pockets formed during the filling process; - The contact electrode 64 can be equipped with centering pins 648 that project from it radially to position the sensor crystal 33 in the center of the hole 5; - The sealed contact electrode 64, specifically its rear part 643, is used to protect the optical assembly 180 from exposure to the filling material, such as, for example, silicone elastomer; furthermore, the internal volume 645 of the contact electrode 64 can be filled with a special material for the protection of the optical assembly 180, for example, as dry N2 gas. FIBER HANDLING AND RETURN FIBER
    [00108] Figure 3 (a) shows a possibility for the manipulation of the return fiber 27, in which the return fiber 27 is running through the detection cavity 7 inside the central hole 5 just next to the sensor element 6. In this configuration the return fiber 27 will be embedded in the filler material to ensure sufficient dielectric strength.
    [00109] Alternative ways to mount the return fiber 27 are: - As shown in Figure 2 (c), at least one sensor module 1 can be placed inside a hollow core insulator 25 consisting of a reinforced epoxy tube with fiber and which has an external cover insulator 19, preferably made of silicone elastomer, on the outer side of the tube; the gap between insulator 1 and hollow core insulator 25 may be filled, for example, with polyurethane foam; since the field strength within this gap is much less than the field strength within the detection cavity 7, it would be beneficial to mount the return fiber 27 within this gap; - Alternatively, the external silicone covers 19 could be directly molded on the outside of the insulator 1. The return fiber 27 could be mounted in a helically groove on the outside of the insulator 1. Here the fiber 27 can be overmolded by silicone covers 19; - Alternatively, the return fiber 27 could be embedded in a paper body impregnated with resin (RIP) of the insulator 1 during the winding.
    [00110] These modes for mounting an optical fiber are not limited to the return fiber 27 only. There may be additional optical fibers mounted inside the sensor module: - For the serial installation of several modules, for example, two modules as shown in Figure 11, one or more fibers, for example, 26 in Figure 3 (a), which pass through the lower module (s) would be necessary to optically connect the upper module (s); preferably, the interconnection of optical fibers in adjacent modules would be done by means of optical splices; optical splices would be placed inside a hollow volume in the structure, for example, a flange, used to make the mechanical connection between the modules; alternatively or in addition, the mechanical connection could be equipped with a side opening which would allow access to the fibers and the optical splice after mechanically connecting the modules; - Optical fibers may be needed to make a connection to other types of sensors mounted on top of the voltage sensor, for example, as an optical current sensor; - Several types of fibers could be used in different locations, that is, the optical fibers could be single module fibers, fibers in multiple modes, or polarization maintenance fibers. HIGH VOLTAGE SENSOR MANUFACTURE
    [00111] In its simplest form the high voltage sensor has a cylindrical shape with a constant outside diameter along its entire length, as shown in Figure 2 (a). In order to save material and reduce costs, it is beneficial to optimize the external shape. In modalities, the diameter of the high voltage sensor can be larger in locations with high electric field strengths, while a smaller diameter can be used in locations where the field strength is low. Possible configurations are shown in Figure 13. In a specifically advantageous design in Figure 13 (b) the diameter of the high voltage sensor is increased around the end position of the shielding electrode Es (not shown) that faces the lower end of the sensor. high voltage where the axial electric field forces on the insulator surface are the highest. Alternatively, a locally enlarged diameter can be positioned at several points other than the length of the sensor. GRADES
    [00112] When using electro-optical crystals as field sensors, several (or all) crystals can be interrogated by a beam of light which passes through the crystals one after another. This could, for example, be achieved either by illuminating a free space beam through all crystals (with the crystal geometric axes properly aligned) or by interconnecting adjacent crystals with a polarizing maintenance fiber. The geometric axes of birefringent fiber are then aligned with the electro-optical geometric axes of the crystals.
    [00113] Instead of raw electro-optical crystals, electro-optical waveguide structures can be used [13],
    [00114] The voltage sensor can also be used with other types of field sensors, such as piezo-optical sensors based on quartz crystals [6] or sensors based on pole waveguides (such as fibers with pole [14],
    [00115] As mentioned, the electrodes are advantageously metallic films embedded inside the insulating insulator 1 with longitudinal dimensions selected so that a voltage applied at the ends of the insulator 1 falls evenly over the length of the field sensor inside the detection cavity 7 and over the entire length of insulator 1 on its outer surface. Excessive peak electrical fields are avoided.
    [00116] Optionally, and as schematically shown in Figure 7, the first and second ends 60, 62 of the field sensor 6 can be electrically contacted with the first and second contact points 2, 3, respectively, for example, by by means of metallic electrodes 64 or optically transparent conductive coatings (such as the layers of Indian tin oxide) at the ends 60, 62 and wires 66 leading through the hole 5. This design further improves the measurement accuracy because it ensures that the ends 60 62 of the field sensor 6 are at the potentials of the two contact points 2, 3, respectively.
    [00117] In general terms and in an advantageous mode, the voltage sensor comprises an insulator 1 with mutually insulated Eij, ES electrodes embedded in it. The electrodes are coaxial and cylindrical and overlap axially over part of their lengths. These are mutually scaled and guide the homogeneous field outside the sensor to a substantially homogeneous but high field within the detection cavity 7 inside the insulator 1. A field sensor 6 is arranged inside the detection cavity 7 to measure the field. This design allows to produce compact voltage sensors for high voltage applications.
    [00118] All embodiments are hereby literally and in their entirety incorporated into the patent description as a reference. REFERENCES 1. L. Duvillaret, S. Rialland, and J.-L. Coutaz ’’ Electro-optic sensors for electric field measurements. II. Choice of the crystal and complete optimization of their orientation ”J. Opt. Soc. Am. B 19 2704 (2002) 2. US 4,904,931 3. US 5,715,058 4. US 6,252,388 5. US 6,380,725 6. US 6,140,810 7. US 6,876,188 8. US 3,875 .327 9. US 4,362,897 10. EP 1 939897 A1 11. US 5,001,419 12. WO 98/05975 13. US 5,029,273 and NAF Jaeger et al., IEEE Trans. Power Deliv. 10 127 (1995) 14. US 5,936,395 and US 6,348,786 15. EP 0 789245 A2 16. K. Bohnert et al., Optical Engineering, 39 (11), 3060 (2000). 17. Standard of the International Electrotechnical Commission IEC60044-7, Instrument transformer - Part 7: Electronic voltage transformers. REFERENCE NUMBERS 1: isolator 2: 3; 20, 30; 21,31: contact points 4: metal contacts 5: hole 6: field sensor 7; 70, 71: detection cavity 8: longitudinal geometric axis 10: 11; 100, 110; 101, 111: first and second regions 14: central electrode end 15: electrode contact end 16, 160, 161: reference plane 18, 180: collimator, optical assembly 19: covers 25: hollow-core high voltage insulator , outside insulator, external insulator 22: support tube 24: supports 26: fibers 27: return fiber 28: tension relief 35: joints 32: spacer tubes 33: crystal, detection element 340: optics, optical assembly 34, 36: polarizers 38: retarder 40: reflector 42: prism reflector 44: light source 46: signal processing unit 480: fiber optic cable (s) 48, 50, 52, 54: fiber connection 56: splitter beam 58: fiber cable 60, 62: field sensor ends 64: metal electrodes, conductive coatings, contact electrodes 640: contact electrode front 641: flexible connection 642: front electrode contact cavity 643: 644 contact electrode back: 645 contact electrode seal: volume contact electrode rear, internal volume of contact electrode 648: centering pin (s) 66: wires 67: beam divider 68: deflection prism a, Bij, Cij: axial distances C1, C2, C3, C4: capacitances P: radial distances Eij, Es: electrodes L: l: length of insulator length of crystal D: diameter of insulator d: diameter of crystal e: diameter of bore
    权利要求:
    Claims (35)
    [0001]
    1. High voltage sensor for measuring a voltage between a first and a second contact point (2, 3, 20, 30, 21, 31), characterized by the fact that it comprises an insulator (1) of an insulating material which extends along an axial direction between the first and second contact points (2, 3, 20, 30, 21,31), a plurality of conductive electrodes (Eij, Es) disposed inside the insulator ( 1), and said electrodes (Eij, Es) are mutually separated by said insulating material and capacitively coupled together, at least one electric field sensor (6) disposed in at least one detection cavity (7; 70, 71), specifically in exactly one detection cavity (7), of said insulator (1), and for at least part of said electrodes (Eij, Es), each electrode axially overlaps at least another one of said electrodes (Eij, Es ), and said electrodes (Eij, Es) are arranged to generate an electric field in said detection cavity (7; 70, 71) that m an average field strength greater than said voltage divided by a distance between said first and said second contact points (2, 3, 20, 30, 21,31), and the high voltage sensor comprising at least least one first primary electrode (E1) electrically connected at the first contact point (2; 20, 21) and a second primary electrode (E2i) electrically connected at the second contact point (3; 30, 31) and said electrodes (Eij, Es) form a capacitive voltage divider between the first and the according to primary electrodes (E11, E2i).
    [0002]
    2. High voltage sensor according to claim 1, characterized by the fact that at least one of said electrodes (Eij, Es) is a shielding electrode (Es) that radially surrounds said detection cavity (7; 70, 71).
    [0003]
    3. High voltage sensor according to claim 1 or 2, characterized by the fact that said field sensor (6) overlaps axially with said first primary electrode (E11) as well as said second primary electrode (E2i ), and specifically since said electric field sensor (6) measures the line integral of the field over a length I of said field sensor (6).
    [0004]
    4. High voltage sensor according to claim 1 or 2, characterized by the fact that said at least one electric field sensor (6) is a local electric field sensor that measures said field over only part of an extension axis of the detection cavity.
    [0005]
    5. High voltage sensor according to any of the preceding claims, characterized by the fact that for each detection cavity (7; 70, 71) said electrodes (Eij, Es) comprise a first set of electrodes E1j with i = 1 .. N1 and a second set of electrodes E2j with i = 1 .. N2, with the electrodes E1j of the first set being arranged in a first region (10) of said insulator (1), whose first region ( 10; 100,101) extends from a reference plane (16; 160, 161) of said detection cavity (7; 70, 71) to said first contact point (2; 20, 21), and with the electrodes E2j of the second set being arranged in a second region (11; 110, 111) of said insulator (1), the second region of which (11; 110, 111) extends from said reference plane (16; 160, 161) to said second point contact (3; 30, 31), said reference plane (16; 160, 161) extending radially through said detection cavity (7; 70, 71), and specifically being that N1 = N2.
    [0006]
    High voltage sensor according to claim 1 or 5, characterized in that the first electrode E11 of said first set forms said first primary electrode and a first electrode E2i of said second set forms said second primary electrodes.
    [0007]
    7. High voltage sensor according to claim 5 or 6, characterized by the fact that, for each set j of electrodes, the electrodes Ejj and Ejj + i overlap axially along an overlapping section, being, in said overlapping section, the electrode Ejj + i is disposed radially out of the electrode Ejj.
    [0008]
    High voltage sensor according to any one of claims 5 to 7, characterized by the fact that, for each set of electrodes, each electrode has a central end (14) that faces said reference plane (16 ; 160, 161) and a contact end (15) axially opposite to said central end (14), the central end (14) of the electrode Ejj + i is closer to said reference plane (16; 160, 161 ) than the central end (14) of the electrode Ejj, and the contact end (15) of the electrode of the Ejj + i is closer to said reference plane (16; 160, 161) than the contact end ( 15) of the electrode Ejj, the central end (14) of the electrode Ejj + i has an axial distance Bjj of the central end (15) of the electrode Ejj, and the contact end (14) of the electrode Ejj + i has an axial distance Cjj from the contact end (14) of the electrode Ejj, and the electrodes Ejj and Ejj + i overlap axially between the ex-contact tremor (15) of the electrode Ej j + i and the central end (14) of the electrode Ejj.
    [0009]
    9. High voltage sensor according to claim 8, characterized by the fact that, for each set of j electrodes, the axial distance Bjj is smaller than the axial distance Cjj, and / or each set j of electrodes has a different axial distance Bji (for example, B1 Í # B2Í) and / or a different axial distance C1 ■ (for example C1i # C2i).
    [0010]
    High voltage sensor according to claim 8 or 9, characterized in that, for each set j of electrodes, the axial distances Bjj are substantially equal to a common distance B and / or the axial distances Cjj are substantially equal at a common distance C.
    [0011]
    High voltage sensor according to any one of claims 2 or 5 to 10, characterized in that said shielding element (Es) overlaps axially with at least one element of said first set and at least an electrode of said second set, and specifically since the shielding electrode (Es) overlaps axially with a radially more external electrode (E1θ) of said first set and a radially more external electrode (E2θ) of said second set and is disposed radially out of said outermost electrodes (E1θ, E2θ) of said first and said second sets.
    [0012]
    High voltage sensor according to any one of claims 5 to 11, characterized by the fact that said electrodes are arranged not symmetrically with respect to the reference plane (16, 160, 161), and / or being said electrodes are embedded in the insulator material which comprises different dielectric constants on any side of the reference plane (16, 160, 161).
    [0013]
    High voltage sensor according to any one of claims 5 to 12, characterized in that for at least one detection cavity (7; 70, 71) the first set of Et electrodes forms a first capacitance (Ci, C3 ) and the second set of electrodes E2> forms a second capacitance (C2, C4).
    [0014]
    14. High voltage sensor according to claim 13, characterized by the fact that the first capacitance (Ci, C3) θ the second capacitance (C2, C4) are made larger than any parasitic capacitance present in a mounted state of the high voltage sensor, and / or where a ratio of the first and second capacities (C1 / C2, C3 / C4) is in the range of 1.1 to 1.5.
    [0015]
    15. High voltage sensor according to claim 13 or 14, characterized by the fact that to increase the first capacitance (Ci, C3) over the second capacitance (C2, C4) The first set of electrodes Et comprises or consists of in i22 Et electrodes that have longer axial lengths than i - E2i electrodes of the second set; and / or the first set of electrodes Et comprises a different number of electrodes than the second set of electrodes E2; and / or the first set of electrodes Et comprises a different spacing (P) between the electrodes Et compared to the second set of electrodes E2I; and / or neighboring electrodes selected in the first and / or second sets are electrically shorted; and / or the first set of electrodes Et comprises an insulating material with a higher dielectric constant than the second set of electrodes E2i.
    [0016]
    16. High voltage sensor according to any of claims 5 to 11, characterized in that the electrodes E1j of said first set are equally spaced in the radial direction and the electrodes E2j of said second set are equally spaced. spaced in the radial direction.
    [0017]
    17. High voltage sensor according to any of claims 5 to 11, characterized in that said electrodes are arranged symmetrically with respect to a reference plane (16; 160,161) that extends radially through said detection cavity ( 7; 70, 71).
    [0018]
    18. High voltage sensor according to any of the preceding claims, characterized by the fact that at least part, specifically all, said electrodes (Ejj, Es) are substantially cylindrical and / or axial to each other.
    [0019]
    19. High voltage sensor according to any of the preceding claims, characterized in that said field sensor (6) is an optical sensor that introduces a field-dependent phase shift between a first polarization or mode and a second polarization or light mode that passes through it, and specifically, said optical sensor comprising an electro-optical device with field-dependent birefringence, specifically a crystal, specifically of crystalline BÍ4Ge30i2 (BGO) or BÍ4SÍ3O12 (BSO), or a waveguide with pole that exhibits a Pockels effect, or a piezoelectric device, specifically of crystalline quartz or a piezoelectric ceramic and a waveguide that carries at least two modes, the said waveguide being connected in said piezoelectric device so that a length of said waveguide is field dependent.
    [0020]
    20. High voltage sensor according to claim 15, characterized in that said field sensor (6) has two optical output channels that have a mutual phase shift that is not a multiple of π, and specifically that it is a mutual phase shift of substantially π / 2.
    [0021]
    21. High voltage sensor according to any of the preceding claims, characterized in that a first end (60) of said field sensor (6) has a contact electrode (64) which is electrically connected, specifically through a wire (66), at said first contact point (2; 20, 21), and a second end (62) of said field sensor (6) has another contact electrode (64) that is electrically connected, specifically through a thread (66), at said second contact point (3; 30, 31).
    [0022]
    22. High voltage sensor according to claim 21, characterized in that at least one of the contact electrodes (64) comprises a front part (640) to accommodate a flexible connection (641), specifically an O-ring of rubber or silicone, in the electric field sensor (6) and / or the front part (640) has rounded edges to minimize the electric field voltages at the end (60, 62) of the electric field sensor (6) and provides a field-free cavity (642) as an air release volume (642) during an electrical field sensor (6) embedding procedure in the insulation material, specifically in compressible silicone or polyurethane foam.
    [0023]
    23. High voltage sensor according to claim 21, characterized by the fact that at least one of the contact electrodes (64) comprises centering pins (648) to radially center the electric field sensor (6) inside a hole (5) of the high voltage sensor, and / or at least one of the contact electrodes (64) is made of an elastic material, such as an electrically conductive rubber or elastomer, or a moldable polymeric material electrically conductive, such as a thermoplastic or electrically conductive thermostable material.
    [0024]
    24. High voltage sensor according to any one of claims 21 to 23, characterized in that at least one of the contact electrodes (64) comprises a rear part (643) that provides an internal volume (645) to accommodate a optical assembly (180) to optically connect the field sensor (6) to an optical cable (480), and specifically the inner volume (645) has a seal (644) and / or a filling substance to protect the assembly (180) against exposure to insulating material.
    [0025]
    25. High voltage sensor according to any one of the preceding claims, characterized in that the insulator (1) comprises a solid, a liquid, a gas, or a vacuum and, specifically, the insulator (1) being placed inside an external hollow core high voltage insulator (25), preferably made of a fiber-reinforced epoxy tube, with an external cover insulator (19), preferably made of silicone elastomer, to accommodate inside from its hollow core the insulator (1), which comprises the detection cavity (7; 70, 71), and a gap outside the insulator (1) to receive optical fibers, such as a return fiber (27) or a transmission fiber (26) for optically connecting additional sensor module bodies or other optical sensors, and with the gap being filled, specifically with polyurethane foam.
    [0026]
    26. High voltage sensor according to any one of claims 1 to 25, characterized in that the optical fibers, such as a return fiber (27) or a transmission fiber (26) for optically connecting module bodies of additional sensors or other optical sensors, are mounted inside a hole (5) of the insulator (1), which comprises the detection cavity (7; 70, 71), and with the hole (5) being filled, specifically with compressible silicone.
    [0027]
    27. High voltage sensor according to any one of claims 1 to 26, characterized in that the insulator (1), which comprises the detection cavity (7; 70, 71), has a helically groove in the its exterior, and optical fibers, such as a return fiber (27) or a transmission fiber (26) for optically connecting additional sensor module bodies or other optimal sensors, are mounted inside the groove and are overmolded , preferably made of silicone, to form an external cover insulator (19) directly over the insulator (1).
    [0028]
    28. High voltage sensor according to any one of claims 1 to 27, characterized in that the insulator (1), which comprises the detection cavity (7; 70, 71), is made of paper impregnated with resin or fiber insulation, and optical fibers, such as a return fiber (27) or a transmission fiber (26) for optically connecting additional sensor module bodies or other optical sensors, are embedded in the resin-impregnated paper or fiber insulation during winding.
    [0029]
    29. High voltage sensor according to any of the preceding claims, characterized by the fact that the external diameter of the high voltage sensor is increased in axial locations that have a high or above average electric field strength and are reduced in axial locations that have a low or below average electric field strength, and specifically the diameter is increased around an axial lower end position of the shielding electrode (Es).
    [0030]
    30. Set of several, specifically identical, high voltage sensors, as defined in any of the preceding claims, characterized by the fact that the sensors are arranged in series.
    [0031]
    31. Assembly according to claim 30, characterized by the fact that it comprises several high voltage sensors as defined in claim 20, with an optical retarder (38), specifically an A / 4 retarder, being assigned to only a subset of the field sensors (6), to add additional phase lag to the light that passes through the field sensor (6).
    [0032]
    32. Assembly according to claim 30 or 31, characterized by the fact that it comprises several high voltage sensors, as defined in claim 20, a subset of said field sensors (6), specifically one of said sense-res field (6), are or are sized to generate a phase shift that is substantially different from the phase shifts of the remaining field sensors (6), specifically a phase shift of ± π / 2 or less at a voltage maximum to be measured of said set.
    [0033]
    33. Assembly according to any one of claims 30 to 32, characterized by the fact that only a subset of high voltage sensors is equipped with a field sensor.
    [0034]
    34. Assembly according to any one of claims 30 to 33, characterized by the fact that the contact points (2, 3, 20, 30, 21,31) are equipped with metallic contacts (4), and the contact - uppermost metal touch on the high voltage side (4) of the set has the largest diameter of all metal contacts (4).
    [0035]
    35. Assembly according to any one of claims 30 to 34, characterized by the fact that optical splices for optical fibers are placed within a hollow volume in a mechanical connection between neighboring high voltage sensors, and specifically being that a side opening is provided in the mechanical connector to provide access to the optical fibers and to mend the optical fibers.
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    同族专利:
    公开号 | 公开日
    AU2011264004B2|2014-02-13|
    US20130093410A1|2013-04-18|
    CN103038648B|2016-01-20|
    CA2801816A1|2011-12-15|
    US9279834B2|2016-03-08|
    KR20130108527A|2013-10-04|
    CN103026244A|2013-04-03|
    CN103038648A|2013-04-10|
    RU2567404C2|2015-11-10|
    BR112012031272A2|2017-06-06|
    AU2011263774A1|2012-12-20|
    CN103026244B|2016-01-20|
    AU2011263774B2|2014-10-09|
    RU2012157570A|2014-07-20|
    US20130099773A1|2013-04-25|
    WO2011154029A1|2011-12-15|
    AU2011264004A1|2013-01-10|
    WO2011154174A1|2011-12-15|
    WO2011154408A1|2011-12-15|
    US9291650B2|2016-03-22|
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    法律状态:
    2018-12-26| B06F| Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]|
    2019-07-02| B06T| Formal requirements before examination [chapter 6.20 patent gazette]|
    2020-04-14| B09A| Decision: intention to grant [chapter 9.1 patent gazette]|
    2020-06-09| B25A| Requested transfer of rights approved|Owner name: ABB SCHWEIZ AG (CH) |
    2020-06-23| B25G| Requested change of headquarter approved|Owner name: ABB SCHWEIZ AG (CH) |
    2020-10-27| B16A| Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]|Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 07/06/2011, OBSERVADAS AS CONDICOES LEGAIS. |
    优先权:
    申请号 | 申请日 | 专利标题
    EPPCT/EP2010/057872|2010-06-07|
    PCT/EP2010/057872|WO2011154029A1|2010-06-07|2010-06-07|High-voltage sensor with axially overlapping electrodes|
    PCT/EP2011/059399|WO2011154408A1|2010-06-07|2011-06-07|High-voltage sensor with axially overlapping electrodes|
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